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APTM100UM65D-ALN
Single switch with Series diode MOSFET Power Module
VDSS = 1000V RDSon = 65m max @ Tj = 25C ID = 145A @ Tc = 25C
Application * Zero Current Switching resonant mode
Features * Power MOS 7(R) MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged * Kelvin source for easy drive * Very low stray inductance - Symmetrical design - M5 power connectors * High level of integration * AlN substrate for improved thermal performance
S D
SK G
Benefits * Outstanding performance at high frequency operation * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Low profile
Absolute maximum ratings
Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS
Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25C Tc = 80C
Tc = 25C
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website - http://www.advancedpower.com
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APTM100UM65D-ALN - Rev 0 July, 2004
Max ratings 1000 145 110 580 30 65 3250 30 50 3200
Unit V A V m W A
APTM100UM65D-ALN
All ratings @ Tj = 25C unless otherwise specified
Symbol Characteristic BVDSS Drain - Source Breakdown Voltage IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current
Electrical Characteristics
Test Conditions VGS = 0V, ID = 1mA
VGS = 0V,VDS= 1000V VGS = 0V,VDS= 800V
Tj = 25C Tj = 125C
Min 1000
Typ
Max 400 2 65 5 400
VGS = 10V, ID = 75A VGS = VDS, ID = 20mA VGS = 30 V, VDS = 0V
3
Unit V A mA m V nA
Dynamic Characteristics
Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Source Charge Gate - Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy
Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 500V ID = 145A VGS = 15V VBus = 500V ID = 145A R G = 0.75 Inductive switching @ 25C VGS = 15V, VBus = 670V ID = 145A, R G = 0.75 Inductive switching @ 125C VGS = 15V, VBus = 670V ID = 145A, R G = 0.75
Min
Typ 28.5 5.08 0.9 1068 136 692 18 14 140 55 4.8 2.9 8 3.9
Max
Unit nF
nC
ns
mJ mJ
Eon includes diode reverse recovery. In accordance with JEDEC standard JESD24-1.
Series diode ratings and characteristics
Symbol VRRM IRM IF(A V) VF Characteristic
Maximum Repetitive Reverse Voltage
Test Conditions
VR=1000V
Min 1000 Tj = 125C
T c = 100C
Typ
Max 2
Maximum Reverse Leakage Current Maximum Average Forward Current Diode Forward Voltage
V
Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C
trr Qrr
Reverse Recovery Time Reverse Recovery Charge
280 350 3 14.4
ns C
APT website - http://www.advancedpower.com
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APTM100UM65D-ALN - Rev 0 July, 2004
50% duty cycle IF = 240A IF = 480A IF = 240A IF = 240A VR = 667V di/dt = 800A/s IF = 240A VR = 667V di/dt = 800A/s
240 1.9 2.2 1.7
Unit V mA A
2.5
APTM100UM65D-ALN
Thermal and package characteristics
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature To Heatsink Mounting torque For teminals Package Weight Transistor Series diode 2500 -40 -40 -40 3 2 150 125 100 5 3.5 280 Min Typ Max 0.038 0.23 Unit C/W V C N.m g
M6 M5
Package outline
APT website - http://www.advancedpower.com
3-6
APTM100UM65D-ALN - Rev 0 July, 2004
APTM100UM65D-ALN
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.04 Thermal Impedance (C/W) 0.035 0.03 0.025 0.02 0.015 0.01 0.005 0.1 0.05 0.0001 0.001 Single Pulse 0.01 0.1 1 10 0.5 0.3 0.9 0.7
0 0.00001
rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics 360 320 I D, Drain Current (A) 280 240 200 160 120 80 40 0 0 5 10 15 20 25
5.5V 5V 6V VGS =15, 10V
Transfert Characteristics 480 ID, Drain Current (A)
VDS > I D(on)xRDS(on)MAX 250s pulse test @ < 0.5 duty cycle
7V 6.5V
400 320 240 160 80 0
TJ=25C TJ =125C 0 1 2 3 4 5 TJ=-55C 6 7 8
30
VDS, Drain to Source Voltage (V) RDS(on) vs Drain Current ID, DC Drain Current (A)
Normalized to VGS =10V @ 72.5A
VGS, Gate to Source Voltage (V) DC Drain Current vs Case Temperature 160 120 80 40 0
RDS(on) Drain to Source ON Resistance
1.4 1.3 1.2 1.1 1 0.9 0.8 0
VGS=10V VGS=20V
80
160
240
320
25
50
75
100
125
150
APTM100UM65D-ALN - Rev 0 July, 2004
ID, Drain Current (A)
TC, Case Temperature (C)
APT website - http://www.advancedpower.com
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APTM100UM65D-ALN
RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Threshold Voltage vs Temperature 1.2 VGS(TH), Threshold Voltage (Normalized) I D, Drain Current (A) 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (C) Capacitance vs Drain to Source Voltage VGS, Gate to Source Voltage (V) 100000 Ciss C, Capacitance (pF) 10000 14 12 10 8 6 4 2 0 0 300 600 900 1200 1500
APTM100UM65D-ALN - Rev 0 July, 2004
ON resistance vs Temperature 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Maximum Safe Operating Area
VGS =10V ID=72.5A
1000
limited by R DSon
100s
100
1ms
10 Single pulse TJ=150C 1 1
10ms
10 100 1000 VDS , Drain to Source Voltage (V)
Gate Charge vs Gate to Source Voltage ID=145A TJ=25C
VDS=200V VDS=500V V DS =800V
Coss
1000
Crss
100 0 10 20 30 40 50 VDS, Drain to Source Voltage (V)
Gate Charge (nC)
APT website - http://www.advancedpower.com
5-6
APTM100UM65D-ALN
Delay Times vs Current 160 t d(off) td(on) and td(off) (ns) 120
V DS=670V RG =0.75 T J=125C L=100H
Rise and Fall times vs Current 100 80
V DS =670V RG =0.75 T J=125C L=100H
tf
tr and tf (ns)
60 40 20 0 tr
80
40
t d(on)
0 50 94 138 182 226 270 I D, Drain Current (A) Switching Energy vs Current
50
94
138 182 226 I D, Drain Current (A)
270
Switching Energy vs Gate Resistance
16 Switching Energy (mJ) 12 10 8 6 4 2 0 50 94 138 182 226 270
ID, Drain Current (A) Operating Frequency vs Drain Current
26 Switching Energy (mJ)
VDS=670V RG=0.75 TJ=125C L=100H
14
Eon
22 18 14 10 6 2 0
V DS=670V ID=145A T J=125C L=100H
Eoff
Eoff
Eon
1
2
3
4
5
6
7
8
Gate Resistance (Ohms) Source to Drain Diode Forward Voltage
250 Frequency (kHz)
ZCS
IDR, Reverse Drain Current (A)
300
1000
200 150 100 50 0 15 35 55 75 95 115 ID, Drain Current (A) 135
VDS=670V D=50% RG=0.75 T J=125C T C=75C
100
TJ=150C TJ=25C
10
Hard switching
1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
APTM100UM65D-ALN - Rev 0 July, 2004
VSD, Source to Drain Voltage (V)
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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